Factors Limiting Resistance under SiC Interface (image) University of Tokyo Share Print E-Mail Caption Electron scattering under the silicon carbide (SiC) interface is limited by three factors: roughness of the SiC interface, charges under the SiC interface and atomic vibration. Credit 2017 Mitsubishi Electric Corporation. Usage Restrictions In relation to the news release only. Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.