Figure 1 (IMAGE)

Institute for Basic Science

Figure 1

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Benchmark of ultra-clean large-area monolayer MoS2-FET. (a) MoS2 FET device schematic. (b) Benchmark of RC vs. n2D in MoS2 FET using different metal contacts for various semiconductor technologies. (c) Benchmark of on/off ratio vs. RC in MoS2 FET compared to different metal contacts used in semiconductor technologies. (d) Benchmark of the maximum on-current (Ion-max) vs. on/off ratio of the MoS2 FET for PPC-Bi contact compared to reports described in the literature.

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Institute for Basic Science

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