Redox-based ion-gating reservoir for high-performance neuromorphic computing. (IMAGE)

Tokyo University of Science

Redox-based ion-gating reservoir for high-performance neuromorphic computing.

Caption

Researchers from TUS and NIMS in Japan have developed a redox-based ion-gating reservoir comprising of LixWO3 thin film and lithium-ion conducting glass ceramic (LICGC). The input gate voltage triggers the transport of lithium ions in the channel and the electrolyte. The difference in ion transport rates leads to a gate and a drain output current that serve as reservoir states.

Credit

Dr. Tohru Higuchi from Tokyo University of Science, Japan.

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