Two different terahertz images of a silicon wafer (IMAGE)
Caption
a, An optical microscope image of the silicon wafer, showing the metal tip (viewed from above), and the boundary between two regions of the wafer. The region on the left (“implant”) has been implanted with ions, so that its conductivity is higher than the region on the right (“substrate”). The two false-color terahertz images at right are close-up views of the boundary (the area indicated by the horizontal dashed line in (a)). These are created with two different nanoscale terahertz imaging techniques, providing different contrast mechanisms for the two different regions of the sample. b, A nanoscale image of the boundary region formed using blue-light-induced terahertz emission (here, ‘LTEM’ stands for ‘laser terahertz emission microscopy’). The region on the left contains a higher density of mobile electrons, and therefore emits less terahertz radiation. c, An image of the same boundary region formed by reflecting an incident THz wave from the sample. The region on the left is more conductive, and therefore reflects THz radiation more efficiently.
Credit
by Pizzuto, A., Ma, P. & Mittleman, D.M.
Usage Restrictions
Credit must be given to the creator.
License
CC BY