A designed silicon vacancy in Moissanite anvil cell to solve the problem of in-situ sensitive magnetic detection under high pressure (IMAGE)

Chinese Academy of Sciences Headquarters

A designed silicon vacancy in Moissanite anvil cell to solve the problem of in-situ sensitive magnetic detection under high pressure

Caption

a. Schematic diagram of moissanite anvil cell and detection of magnetic samples by shallow silicon vacancy defects; b. Relationship of zero-field splitting of silicon vacancy defects with pressure; c. Magnetic phase transition detection of Nd2Fe14b materials; d. Tc-P phase diagram of YBCO superconducting material; e. Illustration of high-pressure in-situ magnetic detection based on silicon vacancy defects in silicon carbide.

Credit

HFIPS

Usage Restrictions

News organizations may use or redistribute this image, with proper attribution, as part of news coverage of this paper only.

License

Original content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.