The four main values of atomic layer deposition (ALD) in oxide semiconductor thin film transistor (TFT) fabrication and applications (IMAGE)

International Journal of Extreme Manufacturing

The four main values of atomic layer deposition (ALD) in oxide semiconductor thin film transistor (TFT) fabrication and applications

Caption

ALD is highly desirable for the fabrication and application of oxide semiconductor-based TFTs. We suggest that there are four key values of ALD in this area, which are illustrated in the figure: (1) In-situ combinatorial/gradient composition control (2) Vertical structure engineering (nano-laminate, dual-channel) (3) Chemical reaction-based varied film properties (4) Insulator and interface engineering. These values are essential for achieving and functionality of oxide semiconductor TFTs, and ALD is an effective method for realizing them.

Credit

By Hye-Mi Kim, Dong-Gyu Kim, Yoon-Seo Kim, Minseok Kim and Jin-Seong Park.

Usage Restrictions

Credit must be given to the creator.

License

CC BY

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.