Experimental nanosheet material marks step toward next generation of low-power, high-performance electronics (IMAGE)

Tsinghua University Press

Experimental nanosheet material marks step toward next generation of low-power, high-performance electronics

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The Bi2Te3 nanosheets with high conductivity were grown on MoS2 as van der Waals contacts, leading to a high-performance MoS2 FET.

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Nano Research, Tsinghua University Press

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