Infrared laser burst allows high energy localization and successful modification inside a semiconductor chip. (IMAGE)
Caption
When intense light from ultrafast lasers is focused inside a semiconductor, highly efficient nonlinear ionization along the beam path creates an opaque plasma that prevents reaching enough energy localization near focus for material writing. Researchers from French National Center for Scientific Research (CNRS, LP3 lab.) found a new solution to solve this important engineering problem. By splitting the energy of infrared ultrafast pulses to form ultrafast bursts of less intense pulses, better localization of excitation is demonstrated. Using fast enough bursts, they accumulate enough energy to cross the material modification threshold and thus locally add new functionalities inside the semiconductor chips.
Credit
By Andong Wang, Pol Sopeña and David Grojo
Usage Restrictions
Credit must be given to the creator.
License
CC BY