Surface-tracked scanning ion conductance microscopy is used to reproduce topography and topography-correlated ion transport across an ionic redox transistor. (IMAGE)

Beijing Zhongke Journal Publising Co. Ltd.

Surface-tracked scanning ion conductance microscopy is used to reproduce topography and topography-correlated ion transport across an ionic redox transistor.

Caption

Voltage-gated ion transport across the ionic redox transistor exhibits properties similar to that of a field effect transistor and currents measured at the nanopipette across the voltage-gated channel are dependent on reduction potentials applied to the membrane. Art by Venkatesh’s group.

Credit

Beijing Zhongke Journal Publising Co. Ltd.

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