Electrically Controlled Exchange-bias Effect Discovered in Magnetic Van Der Waals Heterostructures (IMAGE)

Hefei Institutes of Physical Science, Chinese Academy of Sciences

Electrically Controlled Exchange-bias Effect Discovered in Magnetic Van Der Waals Heterostructures

Caption

(a) Schematic of the solid proton field effect transistor. (b, c) Optical and atomic force microscope images of heterostructure device. (d, e) Gate-dependent exchange bias effects at T = 30 and 40 K, respectively. (f, g) Amplitudes of the exchange bias effects under various gating voltages at T = 30 and 40 K, respectively.

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ZHENG Guolin

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