FIgure 1 (IMAGE)

Pohang University of Science & Technology (POSTECH)

FIgure 1

Caption

Electrical performance of MASnI3 based perovskite thin film transistors (TFT) used in the study (a) TFT structure used in this work (b) TFT performance according to halide anion engineering (c) Hysteresis. Average of 10 transistors per type (d) Hole mobilities calculated from forward/reverse voltage scans. Average of 10 transistors per type (Inset: Mobility variations calculated by (μRev−μFor)/μRev×100%, μFor=Forward scan mobility, μRev=Reverse scan mobility)

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POSTECH

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