Photothermoelectric Effect Photodetectors (IMAGE)
Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS
Caption
a, The structure diagram, the calculated hole temperature distribution and the photoelectric response of the photothermoelectric effect photodetector by silicon nanoribbons. The thickness of the silicon nanomaterial (black part) is 80 nm, and the two ends are gold electrodes (yellow part). The incident laser power density is 16 W cm-2. The hole temperature reaches the maximum value of 670 K in the center of the laser spot. b, The simulated open-circuit voltage dependence of incident laser intensity with different carrier-lattice interaction times and doping concentrations. c, The measured dependence of the open-circuit voltage on the incident laser intensity. The saturation behavior of the open-circuit voltage with increasing laser intensity can be explained by the saturation of carrier temperature. The carrier-lattice interaction time in the model is fitted to be 160 ps.
Credit
by Wei Dai, Weikang Liu, Jian Yang, Chao Xu, Alessandro Alabastri, Chang Liu, Peter Nordlander, Zhiqiang Guan, and Hongxing Xu
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