Silicon Carbide Separated into a Carbon and a Silicon Layer after One Pulse (IMAGE)

Institute for Basic Science

Silicon Carbide Separated into a Carbon and a Silicon Layer after One Pulse

Caption

High-resolution transmission electron microscopy shows that after just one laser pulse of 30 nanoseconds, the silicon carbide (SiC) substrate is melted and separates into a carbon and a silicon layer. More pulses cause the carbon layer to organize into graphene and the silicon to leave as gas.

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