Field Effect Transistor (IMAGE) Georgia Institute of Technology Caption This diagram compares a nanowire/nanobelt based field effect transistor (FET) with a piezoelectric FET. The role played by a gate electrode is replaced by the piezoelectric field produced across the nanowire/nanobelt by an external force (F) so the transport current is gated by the degree of nanowire bending. Credit Image courtesy Zhong Lin Wang Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.