A new strategy of fabricating p-n Junction in Single Crystalline Si Nanowires, twisting (IMAGE)

Science China Press

A new strategy of fabricating p-n Junction in Single Crystalline Si Nanowires, twisting

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Illustration of the relative formation energy as function of twist rate γ of doped Si nanowre for Sb and B dopants at different atomic sites. The strain-free and twisted Si nanowires are shown at the axial view.

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�Science China Press

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