Figure 1. Fabrication process of the monolithically sculpted vdW NOEMS couplers (IMAGE)
Caption
a, The process of holes (1 μm ×3 μm in size, for example) patterning in the spacer h-BN (200-400 nm in thickness) by reactive ion etching (RIE). b, Transferring the holed h-BN onto the surface of Au (or graphite) modulating electrode by PPC (Propylene-Carbonate). c, Completely removing the residual PPC by vacuum annealing at 350℃ for 60 min. d-f, Transferring the h-BN/2D functional materials (Graphene, MoS2, WSe2, and etc.) stacks onto the surface of the holed h-BN/Au stack using a dry transfer method, and annealing at 350℃ for 60 min. g, Cr/Au (5 nm/200 nm) electrodes are deposited using thermal evaporation in the etched trenches followed by standard electron beam lithography (EBL). h, Another RIE process to pattern the emitter. Electron beam resists are removed by solvent. i, Enlarge view of the NOEMS coupler in h. This process gives over 90% sample yield, which is very reliable and without the requirement of the critical point drying procedure.
Credit
by Tongyao Zhang, Hanwen Wang, Xiuxin Xia, Ning Yan, Xuanzhe Sha, Jinqiang Huang, Kenji Watanabe, Takashi Taniguchi, Mengjian Zhu, Lei Wang, Jiantou Gao, Xilong Liang, Chengbing Qin, Liantuan Xiao, Dongming Sun, Jing Zhang, Zheng Han and Xiaoxi Li
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CC BY