Atom Image (IMAGE)

Penn State

Atom Image

Caption

This is an illustration of the Migration Enhance Encapsulated Growth (MEEG) process to stabilize novel wide-bandgap two-dimensional nitride semiconductors that are not naturally occurring. MEEG is facilitated by defects in the graphene lattice that act as pathways for intercalation. When the gallium and nitrogen adatoms meet at the graphene/SiC interface, they chemically react to form two-dimensional gallium nitride.

Credit

Z. Al Balushi and Stephen Weitzner, Penn State MatSE

Usage Restrictions

non commercial use only

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.