Diagram Showing Argon Buffer (IMAGE) North Carolina State University Caption By implanting a buffer made of argon, researchers have created GaN devices that can handle 10 times as much power. The argon buffer is marked here in green and labeled "ion implanted region." Credit Merve Ozbek, North Carolina State University Usage Restrictions Photo credit must be given. License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.