Schematic diagrams of the fabricating processes for the WORM Memory devices (IMAGE)

National Research Council of Science & Technology

Schematic diagrams of the fabricating processes for the WORM Memory devices

Caption

(a-c) hBN transfer to the ITO/PET substrate (d) hBN/ITO/PET substrate; (e) formation of QDs monolayer using a spin-coating technique; (f-g) hBN transfer to the QD/hBN/ITO/PET substrate (h) Au electrode deposition on hBN/QD/hBN/ITO/PET by using a thermal evaporation process; (i) photographs of the device.

Credit

Korea Institute of Science and Technology(KIST)

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