Figure 1 (IMAGE) Osaka University Caption The Ga2O3 semiconductor could pave the way for next-generation semiconductor devices. The use of terahertz (THz) waves to probe semiconductor properties in replacement of conventional yet invasive electrical measurements would accelerate the development of future Ga2O3-based devices and applications. Credit Osaka University Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.