Diamond transistor (IMAGE)
Caption
Figure. (a) Structure of the diamond field-effect transistor (FET) fabricated in this research. The design of this FET allows Hall measurements to be performed while applying a gate voltage, enabling evaluation of the density and mobility of holes in the FET channel. (b) The surface of the diamond substrate was first exposed to hydrogen plasma to terminate it with hydrogen. The substrate was then transferred in vacuum into a glovebox filled with argon gas. Finally, cleaved single-crystalline hexagonal boron nitride (h-BN) was attached to the diamond substrate, thereby reducing the amount of airborne substance—which act as acceptors—attaching to the diamond surface.
Credit
Takahide Yamaguchi National Institute for Materials Science YAMAGUCHI.Takahide@nims.go.jp
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