Direct bonding of diamond to GaN epi layer grown on Si substrate (IMAGE)

Osaka City University

Direct bonding of diamond to GaN epi layer grown on Si substrate

Caption

A GaN layer epitaxially grown on Si substrate is successfully bonded to a 10-mm by 10-mm diamond plate with no use of intermediate layers. The photo, taken from the transparent diamond side, shows that the entire GaN layer is successfully bonded to diamond.

Credit

@2021 Osaka City Univ.

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