Photo-Induced Charge Doping of Graphene/boron Nitride (IMAGE)

DOE/Lawrence Berkeley National Laboratory

Photo-Induced Charge Doping of Graphene/boron Nitride

Caption

Semiconductors made from graphene and boron nitride can be charge-doped using light. When the GBN heterostructure is exposed to light (green arrows), positive charges move from the graphene layer (purple) to boron nitride layer (blue).

Credit

Image courtesy of Feng Wang, Berkeley Lab

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