Mechanism of ferroelectric imprint in Hf0.5Zr0.5O2 (HZO) thin films using standard TiN electrodes. (IMAGE)

Tsinghua University Press

Mechanism of ferroelectric imprint in Hf0.5Zr0.5O2 (HZO) thin films using standard TiN electrodes.

Caption

Researchers investigated the mechanism of ferroelectric imprint in Hf0.5Zr0.5O2 (HZO) thin films using standard TiN electrodes. Based on this model, an effective imprint recovery method has been proposed for improving the device reliability of hafnia based ferroelectric memories (FeRAMs).

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Nano Research

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