Illustration of FET Fabricated Using Monolayer WSe2 (IMAGE)

University of California - Santa Barbara

Illustration of FET Fabricated Using Monolayer WSe2

Caption

This is a schematic view of a back-gated field-effect-transistor fabricated by UCSB researchers using monolayer tungsten diselenide (WSe2) channel material.

Credit

Peter Allen, UCSB

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