finFET (IMAGE)

Purdue University

finFET

Caption

Researchers are making progress in developing new types of transistors, called finFETs, which use a finlike structure instead of the conventional flat design, possibly enabling engineers to create faster and more compact circuits and computer chips. The fins are made not of silicon, but from a material called indium-gallium-arsenide, as shown in this illustration.

Credit

Birck Nanotechnology Center, Purdue University

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