Figure (IMAGE)

Science China Press

Figure

Caption

(a) 通过插层方法调控层间耦合作用的示意图。（b）通过对层间偶耦合作用的调控，可以实现能带拓扑性质从三维拓扑外尔半金属到三维弱拓扑绝缘体的转变，同时还能产生或者增强超导。（c）XRD衍射结果表明插层后的层间距从6.9 Å增大到11.3 Å。（d）输运测量表明插层后的样品显示出转变温度高达7.0 K的超导电性。

Credit

©《中国科学》杂志社

Usage Restrictions

Use with credit.

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.