Tailoring HgTe Quantum Dots' Infrared Emission with Laser-Printed Plasmonic Arrays (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Tailoring HgTe Quantum Dots' Infrared Emission with Laser-Printed Plasmonic Arrays

Caption

a, Artistic representation of a HgTe QD layer coated above a laser-printed Au nanobump array. b, Side-view (view angle of 45°) SEM image showing an Au nanobump array printed at 1-μm pitch (scale bar corresponds to 1 μm). Close-up SEM image on the top inset demonstrates the difference between the period and "effective" period of the nanobump array. Bottom inset shows photograph of two large-scale (3×9 mm2) nanobump arrays produced on a glass-supported Au film. c, Typical Fourier transform infra-red (FTIR) reflection spectrum of the plasmonic nanobump array printed at 1 μm pitch (green curve). Contribution of the localized surface plasmon resonance (LSPR) of the isolated nanobumps of a given shape is shown by the orange dashed curve. FLPR denotes the first order lattice plasmon resonance. Inset provides the distribution of the z-component of the EM field (Ez/E0) calculated 50 nm above the smooth Au film surface at 1480 nm wavelength. Circles indicate the nanobump positions. d, TEM images of HgTe QDs used in this study (scale bar is 20 nm); insets show a magnified view of selected QDs (scale bars are 5 nm). e, Dashed lines - FTIR reflection spectra of plasmonic nanobump arrays printed at pitches of 1 μm (Sample) after HgTe QD deposition. Solid line - Emission spectra of the 3.9-nm size HgTe QD layer deposited on a crystalline Si substrate (black) and Sample (purple). f, Emission spectrum of the 5.0-nm size HgTe QD layer deposited on a reference Si substrate (black) and a Sample (purple). Also shown are a normalized FTIR reflection spectrum of the corresponding plasmonic nanobump arrays coated with the QD layer (green dashed line) as well as part of the near-IR absorption spectrum of the DDT (dodecanethiol) ligand of the HgTe QDs (red).

Credit

by A.A. Sergeev, D.V. Pavlov, A.A. Kuchmizhak, M.V. Lapine, W.K. Yiu, Y. Dong, N. Ke, S. Juodkazis, N. Zhao, S. V. Kershaw, A. L. Rogach

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