GaN p-n Diode Fabricated on a High-Quality Bulk GaN Substrate (IMAGE)

American Institute of Physics

GaN p-n Diode Fabricated on a High-Quality Bulk GaN Substrate

Caption

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets show a GaN p-n diode fabricated on a high-quality bulk GaN substrate and light emission from the junction under forward bias.

Credit

Zongyang Hu

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