Expanding Spin Memory (6 of 6) (IMAGE)

American Association for the Advancement of Science (AAAS)

Expanding Spin Memory (6 of 6)

Caption

This phosphorus doped silicon chip was used to demonstrate the electrically accessible nuclear spin memory. Commercially obtained silicon, as found in conventional electronic devices, was used. Devices were fabricated at the University of Utah. This image relates to an article that appeared in the Dec. 17, 2010, issue of Science, published by AAAS. The study, by Dr. Dane R. McCamey at University of Utah in Salt Lake City, Utah, and colleagues was titled, "Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds."

Credit

Image © Gavin W. Morley (2010)

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