Factors Limiting Resistance under SiC Interface (IMAGE)

University of Tokyo

Factors Limiting Resistance under SiC Interface

Caption

Electron scattering under the silicon carbide (SiC) interface is limited by three factors: roughness of the SiC interface, charges under the SiC interface and atomic vibration.

Credit

2017 Mitsubishi Electric Corporation.

Usage Restrictions

In relation to the news release only.

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.