Cross Sectional Image of An Ultra-Low Noise Transistor. (IMAGE)

Chalmers University of Technology

Cross Sectional Image of An Ultra-Low Noise Transistor.

Caption

This is a cross sectional image of an ultra-low noise transistor. Electrons, accelerated in the high mobility channel under the 100 nanometer gate, collide and dissipate heat that fundamentally limits the noise performance of the transistor.

Credit

Lisa Kinnerud and Moa Carlsson, Krantz NanoArt

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