Trench Gate IGBT and Structural Parameters Used in this Work (IMAGE)

Tokyo Institute of Technology

Trench Gate IGBT and Structural Parameters Used in this Work

Caption

Trench gate IGBT schematic indicating the mesa width (S), gate length (Lg), and the oxide thickness in the MOSFET (tox), cell pitch (W), and the trench depth (DT).

Credit

Tokyo Institute of Technology

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