Figure 1 (IMAGE)

Institute for Basic Science

Figure 1

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Schematic of growth process. Step I: Si atoms were uniformly distributed in the monocrystalline Cu(111) film; step II: SiC formation at 900 ? in a H2-rich environment; step III: multilayer graphene islands were grown at 1075 ?; step IV: a full multilayer graphene film was obtained.

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