X-ray Topographic Image for 4H-SiC (IMAGE) Nagoya Institute of Technology Caption Carrier recombination in single Shockley stacking faults (1SSFs) and at partial dislocations (PDs) was observed, which induced the expansion of 1SSFs. Credit NITech Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.