Schematic of Electric-Double-Layer Transistor Device and Electrochemical Reaction on FeSe Surface (IMAGE)

Tohoku University

Schematic of Electric-Double-Layer Transistor Device and Electrochemical Reaction on FeSe Surface

Caption

(Left) Device structure of electric-double-layer transistor with FeSe channel deposited on oxide substrate. (Right) One-monolayer FeSe is realized by electrochemical etching where Fe and Se ions are dissolved into ionic liquid.

Credit

Junichi Shiogai

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Credit: Junichi Shiogai

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