Ashutosh Tiwari, University of Utah (IMAGE)
Caption
University of Utah materials science and engineering associate professor Ashutosh Tiwari holds up a substrate layered with a newly discovered 2-D material made of tin and oxygen. Tiwari and his team have discovered this new material, tin monoxide, which allows electrical charges to move through it much faster than common 3-D material such as silicon. This breakthrough in semiconductor material could lead to much faster computers and mobile devices such as smartphones that also run on less power and with less heat.
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Dan Hixson/University of Utah College of Engineering
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