Silicon Carbide Crystal Model with Edge Dislocations (IMAGE)

The Henryk Niewodniczanski Institute of Nuclear Physics Polish Academy of Sciences

Silicon Carbide Crystal Model with Edge Dislocations

Caption

Silicon carbide crystal model with edge dislocations introduced in places marked in red. A single crystallographic plane is presented at the bottom. The places where electric charges can 'leak' to neighboring layers are marked in yellow.

IFJ190829b_fot01s.jpg

HR: http://press.ifj.edu.pl/news/2019/08/29/IFJ190829b_fot01.jpg

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Source: IFJ PAN

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