Inset (IMAGE) Toyohashi University of Technology (TUT) Caption This image depicts two-terminal resistance of p- and n-type GaN as a function of proton fluence. This inset shows schematic of sample, and lines are guide for eyes. Credit copyright (c) 2014 Toyohashi University of Technology. All rights reserved. Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.