Strategy And Mechanisms Of The Versatile Photodetector (IMAGE)
Caption
The photodetector combines bolometric effect and photovoltaic effect by constructing stacked heterostructure. A semiconductor material is transferred on the top of VO2. The overlapped area of semiconductor and VO2 is the active area of photovoltaic detector, while VO2 itself is functional area of bolometer. VO2 is semiconductor at room temperature, so the heterostructure is a p-n junction photodetector. The VO2 transforms to metallic phase when the temperature above phase transition temperature (Tc), resulting in a Schottky junction mode. The top semiconductor can be considered a resistor when applied bias voltage is larger than built-in field, therefore, the device become a bolometer.
Credit
by Wei Jiang, Tan Zheng, Binmin Wu, Hanxue Jiao, Xudong Wang, Yan Chen, Xiaoyu Zhang, Meng Peng, Hailu Wang, Tie Lin, Hong Shen, Jun Ge, Weida Hu, Xiaofeng Xu, Xiangjian Meng, Junhao Chu, Jianlu Wang
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