OFET (IMAGE)
Caption
In an OFET, the charge carriers move through the organic semiconductor within a "channel" located at the interface with a dielectric material. Here, the dielectric is represented by the gray grid. The figure illustrates the calculated impact of the roughness of the dielectric surface (showing a 50 nm × 50 nm area) on the averaged carrier occupation The carrier occupation probabilities are represented in blue and indicate that the carriers essentially move within the "valleys" of the dielectric surface (adapted from Adv. Funct. Mater., 2018, 28, 1803096).
Credit
©Science China Press
Usage Restrictions
Use with credit.
License
Licensed content