Schematic diagram of potential sources of thermal runaway hazards in silicon-carbon material. (IMAGE)

Particuology

Schematic diagram of potential sources of thermal runaway hazards in silicon-carbon material.

Caption

Scientists from Southeast University, Physcience Golden Silicon New Material Technology Co., Ltd. and Contemporary Amperex Technology Co., Ltd. proposed a schematic diagram of potential sources of thermal runaway hazards in Si-C materials, to better visualise the exothermic reaction between Si-C anode and electrolyte.

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Xin-Bing Cheng, Southeast University.

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