PCMP schematic diagram of novel green polishing slurry (IMAGE)
Caption
The mechanism diagram illustrates the developed PB/TiO2-based polishing slurry, which exhibits a dynamic interaction with H2O2 under UV illumination, thereby enhancing the material removal process for SCD. In brief, the carrier produced by titanium dioxide can promote hydrogen peroxide to produce highly active •OH radicals, which can induce the formation of an amorphous layer on the diamond surface. Due to the weak bonding of the amorphous layer, the mechanical action of diamond abrasives can swiftly remove it. Consequently, a low-damage atomic-level surface, with Sa of 0.079 nm and damage layer thickness of 0.66 nm, was created on the diamond surface.
Credit
By Zhibin Yu, Zhenyu Zhang, Zinuo Zeng, Cheng Fan, Yang Gu, Chunjing Shi, Hongxiu Zhou, Fanning Meng and Junyuan Feng
Usage Restrictions
Credit must be given to the creator.
License
CC BY