The right recipe creates the narrow, deep holes needed for dense data storage twice as fast (IMAGE)

DOE/Princeton Plasma Physics Laboratory

The right recipe creates the narrow, deep holes needed for dense data storage twice as fast

Caption

An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make these holes so each one is deep, narrow, and vertical, with smooth sides. 

Credit

Kyle Palmer / PPPL Communications Department

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