In the single ion implanter TIBUSSII (Triple Ion Beam UHV System for Single Ion Implantation), individual dopants can be implanted atom by atom into a material, for example to generate qubits. (IMAGE)

Helmholtz-Zentrum Dresden-Rossendorf

In the single ion implanter TIBUSSII (Triple Ion Beam UHV System for Single Ion Implantation), individual dopants can be implanted atom by atom into a material, for example to generate qubits.

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In the single ion implanter TIBUSSII (Triple Ion Beam UHV System for Single Ion Implantation), individual dopants can be implanted atom by atom into a material, for example to generate qubits.

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B. Schröder/HZDR

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