Image 1 (IMAGE)

National Research Council of Science & Technology

Image 1

Caption

[Left] The schematic shows the multi-functions of the 2D-WS2 bottom interfacial layer for interface stability and the vertically well-ordered domain structures of HZO, which leads to excellent ferroelectric properties. [Right] P-V hysteresis loops of ferroelectric capacitors without (red) and with (blue) 2D-WS2 bottom interfacial layer at pristine state. A significant increase in 2Pr is observed in the bottom interface engineering.

Credit

Korea Institute of Materials Science (KIMS)

Usage Restrictions

The sources of photos and research results from KIMS must be specified.

License

Original content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.