FIG 1 (IMAGE)

Compuscript Ltd

FIG 1

Caption

Fig. 1.  (a) Epitaxy and mesa structure of the proposed MUTC-PD. (b) Simulated RF power versus photocurrent. (c) Electric field distributions in the depletion region at different photocurrents. (d) SEM image of the fabricated device. (e) Measured frequency responses under various photocurrents and (f) RF power versus photocurrent of the 8-μm-diameter PD under 2 V reverse bias voltage. The inset in (e) is the microscope photo of the 8-μm-diameter PD.

 

 

 

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