Electrical and optical properties of B-As devices (IMAGE)

Advanced Devices & Instrumentation

Electrical and optical properties of B-As devices

Caption

(A) Schematic of B-As photodetector structure. (B) The optical micrograph of the device. (C) Transport characterization: When scanning Vg in the range of −1.5 to 1.5 V, the room-temperature transmission characteristics is obtained by maintaining Vds = 0.1 V. (D) The I–V characteristic curve of the B-As device without illumination, and the illustration shows the I–V curve under laser irradiation. (E) Energy band diagram of B-As photodetector with or without bias. (F) Bias voltage dependence of the B-As photodetector under different light intensity. (G and H) Scanning photocurrent image of the B-As photodetector under 1,550-nm laser irradiation, where the bias voltage between the source and drain electrodes are 0 and 0.01 V, respectively.

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Advanced Devices & Instrumentation

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