Nanodots With Ferroelectric and Ferromagnetic Domains for Low-Power Nonvolatile Multiferroic Memory Devices (IMAGE)

_Tokyo Institute of Technology

Nanodots With Ferroelectric and Ferromagnetic Domains for Low-Power Nonvolatile Multiferroic Memory Devices

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BFCO 60-nm nanodots, with single domain structures, hold promise for high-density and low-power nonvolatile magnetic memory devices.

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Tokyo Tech

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