Novel Hydrogen Infection Method for Solving Contract Issues in Oxide Semiconductors (IMAGE)

Tokyo Institute of Technology

Novel Hydrogen Infection Method for Solving Contract Issues in Oxide Semiconductors

Caption

A novel method that employs palladium to inject hydrogen into the deeply buried oxide-metal electrode contacts of amorphous oxide semiconductors (AOSs) storage devices, which reduces contact resistance, has been developed by scientists at Tokyo Tech. This innovative method presents a valuable solution for addressing the contact issues of AOSs, paving the way for their application in next-generation storage devices and displays.

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Assistant Professor Masatake Tsuji and Honorary Professor Hideo Hosono

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